High-efficiency unitraveling-carrier photodiode with an integrated total-reflection mirror

Author

Ito, Hiroshi ; Furuta, Tomofumi ; Kodama, Satoshi ; Ishibashi, Tadao

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

Volume

18

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

384

Lastpage

387

Abstract

A novel photodiode (PD) structure with an integrated total-reflection mirror which can enhance the quantum efficiency in back-illuminated geometry is proposed. Due to the diagonal propagation of the reflected light at the total-reflection mirror through the absorption layer, the efficiency is improved by about 50% from that of the normally irradiated case. By employing a unitraveling-carrier structure together with a thick absorption layer of 4700 A, the fabricated PD exhibits a high responsivity of 0.65 A/W, a high 3-dB bandwidth of 50 GHz, and a high-output voltage of 5 V, simultaneously.

Keywords

integrated optics; integrated optoelectronics; light absorption; mirrors; optical communication equipment; photodiodes; reflectivity; 4700 A; 5 V; 50 GHz; absorption layer; back-illuminated geometry; diagonal propagation; high responsivity; high-efficiency unitraveling-carrier photodiode; high-output voltage; integrated total-reflection mirror; normally irradiated case; photodiode structure; quantum efficiency; reflected light; thick absorption layer; unitraveling-carrier structure; Absorption; Bandwidth; Geometry; Indium tin oxide; Mirrors; Optical propagation; Optical reflection; Optical refraction; Photodiodes; Voltage;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.827511

Filename

827511