DocumentCode
1311314
Title
1 Gbit/s high-speed bit-synchronisation LSI for B-ISDN
Author
Otsuka, Y.
Author_Institution
NTT Commun. Switching Lab., Tokyo, Japan
Volume
26
Issue
10
fYear
1990
fDate
5/1/1990 12:00:00 AM
Firstpage
622
Lastpage
624
Abstract
The CCITT recommended that the bit rates for synchronous digital hierarchy (SDH) should be multiples of 155.52 Mbit/s. In handling high-speed data (such as 622.08 Mbit/s) in B-ISDN switching systems, there are problems associated with waveform degradation caused by impedance mismatching and amplitude attenuation. A countermeasure is the regeneration of the distorted waveforms using the system clock in each board. A bit-synchronisation circuit allows distorted waveforms to be regenerated and simplifies the design of timing between boards. The author have developed a high-speed bit-synchronisation LSI with excellent jitter tolerance in the 600 Mbit/s region and which has a simple circuit structure. The LSI features a circuit structure based on an elastic store, Si-bipolar super self-aligned process technology (SST),1 and careful timing design. It can handle three different bit-rates (622.08, 155.52, and 51.84 Mbit/s) and has a maximum bit rate of 1 Gbit/s.
Keywords
ISDN; bipolar integrated circuits; data communication equipment; digital communication systems; digital integrated circuits; electronic switching systems; elemental semiconductors; large scale integration; silicon; synchronisation; timing circuits; 51.84 Mbit/s to 1 Gbit/s; B-ISDN switching systems; Si bipolar technology; bipolar IC; bit-rates; bit-synchronisation LSI; digital IC; distorted waveform regeneration; elastic store; high-speed data; jitter tolerance; super self-aligned process technology; synchronous digital hierarchy; timing design;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900408
Filename
82752
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