Reduction of the reverse short channel effect in thick SOI MOSFET´s

We show that the reverse short channel effect (RSCE) is reduced in NMOS devices made in thick silicon-on-insulator (SOI) material. The reduction of the RSCE depends on the thickness of the Si overlayer. It is found that the thinner the Si film, the less the threshold voltage roll-on. The experimental findings are explained by a decrease of the lateral distribution of silicon interstitials generated at the source and drain (S/D) region and are related with their high recombination velocity at the buried oxide. This method can be used to separately test the influence of S/D point defects on the RSCE from other different hypotheses reported in the literature. Coupled process-device simulation reveals that the method is very sensitive to fundamental point defect properties.