Title :
Shaper Design in CMOS for High Dynamic Range
Author :
De Geronimo, Gianluigi ; Li, Shaorui
Author_Institution :
Instrum. Div., Brookhaven Nat. Lab., Upton, NY, USA
Abstract :
We start with an analysis of the configurations commonly adopted to implement linear shapers. We show that, once the ENC from the charge amplifier is defined, the dynamic range of the system is set by the voltage swing and the value of the capacitance realizing the poles. The configuration used to realize the poles has also an impact, and those configurations based on passive components in feedback are expected to offer a higher dynamic range than the ones that use both active and passive components, like scaling mirrors. Finally, we introduce the concept of delayed dissipative feedback (DDF), which consists of delaying the resistive feedbacks from the furthest available nodes along the shaping chain. We will show that, in order to implement semi-Gaussian shapers, a small capacitor in positive feedback is required. The DDF technique can overcome some of the limitations of the more classical configurations. For example, in a third order shaper a factor of two higher dynamic range can be obtained or, at equal dynamic range, about 25% of the capacitance is needed (i.e. about 30% of the area in practical cases).
Keywords :
CMOS integrated circuits; amplifiers; CMOS; active components; charge amplifier; delayed dissipative feedback; equivalent noise charge; high dynamic range; linear shapers; passive components; positive feedback; resistive feedbacks; semiGaussian shapers; shaper design; shaping chain; shaping scaling; voltage swing; CMOS integrated circuits; Capacitance; Dynamic range; Equations; Impedance; Noise; Shape; CMOS; high dynamic range; low-noise; shaper;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2162963