Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]

Author

Papastamatiou, M. ; Arpatzanis, Nikos ; Papaioannou, G.J. ; Papastergiou, C. ; Christou, A.

Author_Institution

Solid State Phys. Section, Athens Univ., Greece

Volume

44

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

364

Lastpage

372

Abstract

The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT´s). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of buffer layer degradation and the theoretical estimation of the shift of the threshold voltage

Keywords

III-V semiconductors; aluminium compounds; deep levels; electron traps; failure analysis; gallium arsenide; high electron mobility transistors; neutron effects; semiconductor device models; semiconductor device reliability; AlGaAs-GaAs; III-V semiconductors; buffer layer degradation; charge control model; deep traps; donor layer; failure mechanism sources; high electron mobility transistors; layer structures; neutron radiation effects; threshold voltage; Buffer layers; Degradation; Electron traps; Estimation theory; Failure analysis; HEMTs; MODFETs; Neutron radiation effects; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.556145

Filename

556145