Title :
An accurate HJFET capacitance-voltage model for implementation with a circuit simulator
Author :
Matsuno, Noriaki ; Yano, Hitoshi ; Hida, Hikaru ; Maeda, Tadashi
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
We present a new accurate HJFET capacitance model to implement with a circuit simulator. This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range. The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage. It also takes into account the field dependence of the 2-DEG mobility, which is very strong for deep sub-micron devices. The model for parasitic MESFET capacitance is based on the formula for a Schottky diode. Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design. The simulated results agree well with the measurements
Keywords :
III-V semiconductors; circuit CAD; circuit analysis computing; field effect MMIC; field effect transistors; gallium arsenide; integrated circuit design; semiconductor device models; two-dimensional electron gas; GaAs; HJFET; analytical model; capacitance transition; capacitance-voltage characteristics; capacitance-voltage model; circuit design; circuit simulator; deep sub-micron devices; gradual channel approximation; parasitic MESFET capacitance; physical parameters; threshold voltage; two-dimensional electron gas conduction; Analytical models; Capacitance-voltage characteristics; Circuit simulation; Circuit synthesis; Electrons; Fabrication; MESFETs; Parasitic capacitance; Schottky diodes; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
