• DocumentCode
    1311770
  • Title

    An accurate HJFET capacitance-voltage model for implementation with a circuit simulator

  • Author

    Matsuno, Noriaki ; Yano, Hitoshi ; Hida, Hikaru ; Maeda, Tadashi

  • Author_Institution
    Microelectron. Res. Labs., NEC Corp., Ibaraki, Japan
  • Volume
    44
  • Issue
    3
  • fYear
    1997
  • fDate
    3/1/1997 12:00:00 AM
  • Firstpage
    373
  • Lastpage
    378
  • Abstract
    We present a new accurate HJFET capacitance model to implement with a circuit simulator. This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range. The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage. It also takes into account the field dependence of the 2-DEG mobility, which is very strong for deep sub-micron devices. The model for parasitic MESFET capacitance is based on the formula for a Schottky diode. Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design. The simulated results agree well with the measurements
  • Keywords
    III-V semiconductors; circuit CAD; circuit analysis computing; field effect MMIC; field effect transistors; gallium arsenide; integrated circuit design; semiconductor device models; two-dimensional electron gas; GaAs; HJFET; analytical model; capacitance transition; capacitance-voltage characteristics; capacitance-voltage model; circuit design; circuit simulator; deep sub-micron devices; gradual channel approximation; parasitic MESFET capacitance; physical parameters; threshold voltage; two-dimensional electron gas conduction; Analytical models; Capacitance-voltage characteristics; Circuit simulation; Circuit synthesis; Electrons; Fabrication; MESFETs; Parasitic capacitance; Schottky diodes; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.556146
  • Filename
    556146