DocumentCode
1311770
Title
An accurate HJFET capacitance-voltage model for implementation with a circuit simulator
Author
Matsuno, Noriaki ; Yano, Hitoshi ; Hida, Hikaru ; Maeda, Tadashi
Author_Institution
Microelectron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume
44
Issue
3
fYear
1997
fDate
3/1/1997 12:00:00 AM
Firstpage
373
Lastpage
378
Abstract
We present a new accurate HJFET capacitance model to implement with a circuit simulator. This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range. The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage. It also takes into account the field dependence of the 2-DEG mobility, which is very strong for deep sub-micron devices. The model for parasitic MESFET capacitance is based on the formula for a Schottky diode. Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design. The simulated results agree well with the measurements
Keywords
III-V semiconductors; circuit CAD; circuit analysis computing; field effect MMIC; field effect transistors; gallium arsenide; integrated circuit design; semiconductor device models; two-dimensional electron gas; GaAs; HJFET; analytical model; capacitance transition; capacitance-voltage characteristics; capacitance-voltage model; circuit design; circuit simulator; deep sub-micron devices; gradual channel approximation; parasitic MESFET capacitance; physical parameters; threshold voltage; two-dimensional electron gas conduction; Analytical models; Capacitance-voltage characteristics; Circuit simulation; Circuit synthesis; Electrons; Fabrication; MESFETs; Parasitic capacitance; Schottky diodes; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.556146
Filename
556146
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