Title :
Polarisation-sensitive photodiode for the 632.8 nm spectral region
Author :
Manasson, V.A. ; Kovalyuk, Z.D. ; Drapak, S.I. ; Katerinchuk, V.N.
Author_Institution :
Inst. of Mater. Sci., Acad. of Sci., Ukrainian SSR, USSR
fDate :
5/1/1990 12:00:00 AM
Abstract :
A new heterojunction photodiode with high polarisation sensitivity in the 632.8 nm spectral region has been fabricated. The heterojunction was prepared on a p-type GaSe wafer by depositing an n-type In2O3 layer. A pleochroism coefficient of the photocurrent of more than 90% has been observed.
Keywords :
gallium compounds; indium compounds; light polarisation; p-n heterojunctions; photodiodes; semiconductor materials; sensitivity; 632.8 nm; In 2O 3-GaSe; heterojunction photodiode; high polarisation sensitivity; n-type layer; p-type wafer; pleochroism coefficient; polarisation-sensitive photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900434
