• DocumentCode
    1311798
  • Title

    Polarisation-sensitive photodiode for the 632.8 nm spectral region

  • Author

    Manasson, V.A. ; Kovalyuk, Z.D. ; Drapak, S.I. ; Katerinchuk, V.N.

  • Author_Institution
    Inst. of Mater. Sci., Acad. of Sci., Ukrainian SSR, USSR
  • Volume
    26
  • Issue
    10
  • fYear
    1990
  • fDate
    5/1/1990 12:00:00 AM
  • Firstpage
    664
  • Abstract
    A new heterojunction photodiode with high polarisation sensitivity in the 632.8 nm spectral region has been fabricated. The heterojunction was prepared on a p-type GaSe wafer by depositing an n-type In2O3 layer. A pleochroism coefficient of the photocurrent of more than 90% has been observed.
  • Keywords
    gallium compounds; indium compounds; light polarisation; p-n heterojunctions; photodiodes; semiconductor materials; sensitivity; 632.8 nm; In 2O 3-GaSe; heterojunction photodiode; high polarisation sensitivity; n-type layer; p-type wafer; pleochroism coefficient; polarisation-sensitive photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900434
  • Filename
    82779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1311798