Title :
Suppression of the floating-body effect in SOI MOSFET´s by the bandgap engineering method using a Si1-xGex source structure
Author :
Yoshimi, Makoto ; Terauchi, Mamoru ; Nishiyama, Akira ; Arisumi, Osamu ; Murakoshi, Atsushi ; Matsuzawa, Kazuya ; Shigyo, Naoyuki ; Takeno, Shiro ; Tomita, Mitsuhiro ; Suzuki, Ken ; Ushiku, Yukihiro ; Tango, Hiroyuki
Author_Institution :
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
The bandgap engineering method using a SiGe source structure is presented as a means to suppress the floating-body effect in SOI MOSFET´s. Experiments using Ge implantation are carried out to form a narrow-bandgapped SiGe layer in the source region. It has been confirmed that Ge-implanted SIMOX exhibited a 0.1 eV bandgap narrowing with a relatively low Ge-dosage of 1016 cm-2. The fabricated N-type SOI-MOSFET´s exhibited suppressed parasitic bipolar effects, such as improvement of the drain breakdown voltage or latch voltage, and suppression of abnormal subthreshold slope. Advantages over other conventional methods are also discussed, indicating that the bandgap engineering provides a practical method to suppress the floating-body effect
Keywords :
Ge-Si alloys; MOSFET; SIMOX; energy gap; ion implantation; Ge implantation; Ge-implanted SIMOX; N-type SOI-MOSFET; SOI MOSFET; Si:Ge; SiGe; SiGe source structure; abnormal subthreshold slope suppression; bandgap engineering method; bandgap narrowing; drain breakdown voltage; floating-body effect suppression; latch voltage; narrow-bandgapped SiGe layer; parasitic bipolar effect suppression; Breakdown voltage; Charge carrier density; Germanium silicon alloys; Laboratories; Leakage current; MOSFET circuits; Photonic band gap; Random access memory; Silicon germanium; Telecommunication computing;
Journal_Title :
Electron Devices, IEEE Transactions on
