Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT´s

Author

Richey, David M. ; Cressler, John D. ; Joseph, Alvin J.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

Volume

44

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

431

Lastpage

440

Abstract

The SiGe heterostructure device simulation tool SCORPIO is used to investigate profile optimization in SiGe HBT´s for high-performance analog circuit applications. After calibrating SCORPIO to measured data, the effects of germanium profile shape on current gain, cut-off frequency, Early voltage and maximum oscillation frequency are compared over the temperature range of 200-360 K. The impact of aggressive base profile scaling on device performance is also investigated as a function of SiGe film stability

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; carrier mobility; cryogenic electronics; doping profiles; electronic engineering computing; finite difference methods; heterojunction bipolar transistors; microwave bipolar transistors; minority carriers; semiconductor device models; semiconductor doping; semiconductor materials; 200 to 360 K; Early voltage; Ge profile optimization; SCORPIO; SiGe; SiGe film stability; SiGe heterostructure device simulation tool; UHV/CVD SiGe HBT; aggressive base profile scaling; current gain; cut-off frequency; doping profile; high-performance analog circuit applications; low temperature simulation; maximum oscillation frequency; minority carrier mobility; scaling issues; Analog circuits; Circuit simulation; Current measurement; Cutoff frequency; Frequency measurement; Gain measurement; Germanium silicon alloys; Performance gain; Shape measurement; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.556153

Filename

556153