Title :
Heavily doped emitter as a lossy transmission line
Author_Institution :
El-Microelectronics, Nis, Yugoslavia
fDate :
5/1/1990 12:00:00 AM
Abstract :
The analogy between the transport of minority carriers in heavily doped bipolar emitters and wave propagation along a lossy transmission line is described. It is used to theoretically derive Selvakumar and Roulston´s (1987) novel relation between transport parameters and to explain its physical origin.
Keywords :
bipolar transistors; heavily doped semiconductors; minority carriers; semiconductor device models; transmission line theory; heavily doped bipolar emitters; lossy transmission line; minority carriers; transistors; transport parameters; wave propagation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900442
