Title :
Negative Rs and Rd in GaAs FET and HEMT equivalent circuits
Author :
Ladbrooke, P.H. ; Hill, Andrew J.
Author_Institution :
GaAs Code Ltd., Cambridge, UK
fDate :
5/1/1990 12:00:00 AM
Abstract :
A physical basis for negative Rs and Rd values is outlined. The implications for FET measurements, equivalent circuits, FET scaling and large-signal FET model extraction are discussed.
Keywords :
III-V semiconductors; equivalent circuits; field effect transistors; gallium arsenide; high electron mobility transistors; negative resistance; semiconductor device models; FET measurements; FET scaling; GaAs; HEMT; drain resistance; equivalent circuits; large-signal FET model extraction; source resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900445
