Title :
ESD protection for output pad with well-coupled field-oxide device in 0.5-μm CMOS technology
Author :
Wu, Chau-Neng ; Ker, Ming-Dou
Author_Institution :
Winbond Electron. Corp., Hsinchu, Taiwan
fDate :
3/1/1997 12:00:00 AM
Abstract :
A well-coupled field-oxide device (WCFOD) is first proposed to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. This WCFOD has been practically implemented in a 256-K high-speed SRAM product to sustain HBM ESD stress up to 6500 V
Keywords :
CMOS memory circuits; SRAM chips; electrostatic discharge; integrated circuit reliability; protection; 0.5 micron; 256 Kbit; 6500 V; CMOS technology; ESD protection; HBM ESD stress; SRAM product; WCFOD; lateral bipolar action; output pad; parasitic capacitor; transient voltage; well-coupled field-oxide device; Atherosclerosis; CMOS process; CMOS technology; Capacitors; Electrostatic discharge; MOS devices; Protection; Robustness; Stress; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
