Title :
Selective silicon epitaxial growth by LPCVD using silane
Author :
Parker, Gregory J. ; Starbuck, C.M.K.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
6/21/1990 12:00:00 AM
Abstract :
Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0.7 mu m thickness showing excellent uniformity and selectivity without the use of HCl are presented.
Keywords :
chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; 0.7 micron; LPCVD; Si; SiH 4 gas; selective epitaxial growth; selectivity; semiconductors; uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900545
