• DocumentCode
    1311905
  • Title

    Selective silicon epitaxial growth by LPCVD using silane

  • Author

    Parker, Gregory J. ; Starbuck, C.M.K.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    831
  • Lastpage
    832
  • Abstract
    Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0.7 mu m thickness showing excellent uniformity and selectivity without the use of HCl are presented.
  • Keywords
    chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; 0.7 micron; LPCVD; Si; SiH 4 gas; selective epitaxial growth; selectivity; semiconductors; uniformity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900545
  • Filename
    82798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1311905