Title :
High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing
Author :
Subrahmanyam, P.V.S. ; Prabhakar, A. ; Vasi, J.
Author_Institution :
ITI Ltd., Bangalore, India
fDate :
3/1/1997 12:00:00 AM
Abstract :
Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric
Keywords :
CVD coatings; chemical vapour deposition; dielectric thin films; electron traps; high field effects; interface states; rapid thermal processing; semiconductor device reliability; semiconductor-insulator boundaries; N2O; N2O/O2/N2O cycle; O2; RTP; Si; Si wafers; Si-SiO2; Si-SiO2 interface endurance; SiNO; electrical characteristics; electron trapping reduction; high field stressing effects; highly reliable thin oxynitride layers; interface state generation reduction; positive charge generation reduction; rapid thermal processing; split N2O cycle; thin gate dielectric; Character generation; Dielectrics; Electric variables; Electrons; Etching; Furnaces; Oxidation; Rapid thermal processing; Silicon; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
