Title :
Photoluminescence spectroscopy measurement of elastic strain in heteroepitaxial GaAs films
Author :
Humphreys, T.P. ; Nemanich, Robert J. ; Das, Krishanu ; Parikh, N.R. ; Posthill, J.B.
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
fDate :
6/21/1990 12:00:00 AM
Abstract :
GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7 K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solid-phase epitaxy process are strain-free.
Keywords :
III-V semiconductors; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor technology; strain measurement; thermal expansion; 7 K; GaAs on Si; GaAs-Al 2O 3; GaAs-Si; GaAs-Si-Al 2O 3; GaAs-Si-SiO 2; SIMOX; SOS; dominant photoluminescence peaks; double solid-phase epitaxy process; elastic strain measurement; heteroepitaxial GaAs films; insulating substrates; photoluminescence spectroscopy; thermal expansion matching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900548
