Title :
636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodes
Author :
Itaya, Kazuhiko ; Ishikawa, Masatoshi ; Uematsu, Yutaka
Author_Institution :
Toshiba Res. & Dev. Centre, Kawasaki, Japan
fDate :
6/21/1990 12:00:00 AM
Abstract :
636 nm room temperature CW operation has been achieved by heterobarrier blocking structure InGaAlP laser diodes with a quaternary active layer. This structure was fabricated by two-step metal-organic chemical vapour deposition. The threshold current was 102 mA at 20 degrees C and CW operation of 3 mW was attained at up to 48 degrees C.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 102 mA; 20 to 48 C; 3 mW; 636 nm; InGaAlP laser diodes; MOCVD; heterobarrier blocking structure; quaternary active layer; room temperature CW operation; semiconductors; short wavelength laser diodes; threshold current; two-step metal-organic chemical vapour deposition; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900550
