DocumentCode
1311948
Title
636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodes
Author
Itaya, Kazuhiko ; Ishikawa, Masatoshi ; Uematsu, Yutaka
Author_Institution
Toshiba Res. & Dev. Centre, Kawasaki, Japan
Volume
26
Issue
13
fYear
1990
fDate
6/21/1990 12:00:00 AM
Firstpage
839
Lastpage
840
Abstract
636 nm room temperature CW operation has been achieved by heterobarrier blocking structure InGaAlP laser diodes with a quaternary active layer. This structure was fabricated by two-step metal-organic chemical vapour deposition. The threshold current was 102 mA at 20 degrees C and CW operation of 3 mW was attained at up to 48 degrees C.
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 102 mA; 20 to 48 C; 3 mW; 636 nm; InGaAlP laser diodes; MOCVD; heterobarrier blocking structure; quaternary active layer; room temperature CW operation; semiconductors; short wavelength laser diodes; threshold current; two-step metal-organic chemical vapour deposition; visible laser diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900550
Filename
82803
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