Title :
Evaluation of currents in the fA range
Author :
Girard, P. ; Nouet, Pascal
Author_Institution :
CNRS, Montpellier Univ., France
fDate :
6/21/1990 12:00:00 AM
Abstract :
A method allowing the determination of very low currents is presented. It consists in the association of an amplification element to a leaky device on the same silicon chip. A theoretical approach is given, the possibilities of this method are deduced, and experimental results are reported and discussed.
Keywords :
MOS integrated circuits; electric current measurement; insulated gate field effect transistors; leakage currents; MOS ICs; amplification element; experimental results; femtoampere current measurement; in situ amplifier; leakage currents; leaky device; measurement of very low currents; theoretical approach;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900553
