DocumentCode
1311967
Title
Evaluation of currents in the fA range
Author
Girard, P. ; Nouet, Pascal
Author_Institution
CNRS, Montpellier Univ., France
Volume
26
Issue
13
fYear
1990
fDate
6/21/1990 12:00:00 AM
Firstpage
844
Lastpage
846
Abstract
A method allowing the determination of very low currents is presented. It consists in the association of an amplification element to a leaky device on the same silicon chip. A theoretical approach is given, the possibilities of this method are deduced, and experimental results are reported and discussed.
Keywords
MOS integrated circuits; electric current measurement; insulated gate field effect transistors; leakage currents; MOS ICs; amplification element; experimental results; femtoampere current measurement; in situ amplifier; leakage currents; leaky device; measurement of very low currents; theoretical approach;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900553
Filename
82806
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