• DocumentCode
    1311975
  • Title

    Anisotype, enhancement-mode, heterojunction gate field-effect transistors

  • Author

    Lin, C.L. ; Wieder, H.H. ; Zuleeg, R.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    846
  • Lastpage
    847
  • Abstract
    Anisotype, p+-GaAs/n-In0.15Ga0.85As heterojunction field-effect transistors, grown by molecular beam epitaxy and fabricated by a self-aligned process, have been investigated for digital logic applications. Peak transconductance of 411 mS/mm and a K-value of 292 mA/V2/mm were obtained for an enhancement-mode device with gate length of 1 mu m. Preliminary analysis of a nonisolated device leads to a cut off frequency of 17.5 GHz.
  • Keywords
    III-V semiconductors; VLSI; digital integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor technology; 1 micron; 17.5 GHz; GaAs-In 0.15Ga 0.85As; K-value; anisotype heterojunction FET; cut off frequency; digital logic applications; enhancement-mode; gate length; heterojunction field-effect transistors; heterojunction gate field-effect transistors; molecular beam epitaxy; nonisolated device; peak transconductance; self-aligned process; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900554
  • Filename
    82807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1311975