Title :
Anisotype, enhancement-mode, heterojunction gate field-effect transistors
Author :
Lin, C.L. ; Wieder, H.H. ; Zuleeg, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA
fDate :
6/21/1990 12:00:00 AM
Abstract :
Anisotype, p+-GaAs/n-In0.15Ga0.85As heterojunction field-effect transistors, grown by molecular beam epitaxy and fabricated by a self-aligned process, have been investigated for digital logic applications. Peak transconductance of 411 mS/mm and a K-value of 292 mA/V2/mm were obtained for an enhancement-mode device with gate length of 1 mu m. Preliminary analysis of a nonisolated device leads to a cut off frequency of 17.5 GHz.
Keywords :
III-V semiconductors; VLSI; digital integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor technology; 1 micron; 17.5 GHz; GaAs-In 0.15Ga 0.85As; K-value; anisotype heterojunction FET; cut off frequency; digital logic applications; enhancement-mode; gate length; heterojunction field-effect transistors; heterojunction gate field-effect transistors; molecular beam epitaxy; nonisolated device; peak transconductance; self-aligned process; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900554
