Title :
Simple extraction method for mobility parameters in Si-MOSFETs at 77 K
Author :
Lee, J.I. ; Lee, Matthew B. ; Kang, K.N. ; Park, K.O.
Author_Institution :
Opt. Electron. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
6/21/1990 12:00:00 AM
Abstract :
A simple technique for the extraction of low field mobility mu 0 and linear and quadratic coefficients alpha and beta in Si-MOSFETs at 77 K is presented. From measurement of the drain currents and transconductances of the devices one can determine the parameters. The method is applied to long channel and short channel LDD MOSFETs.
Keywords :
carrier mobility; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 77 K; LDD; MOSFETs; Si; drain currents; linear coefficients; long channel devices; low field mobility; mobility parameters extraction; models; quadratic coefficients; semiconductors; short channel devices; transconductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900558
