• DocumentCode
    1312024
  • Title

    Simple extraction method for mobility parameters in Si-MOSFETs at 77 K

  • Author

    Lee, J.I. ; Lee, Matthew B. ; Kang, K.N. ; Park, K.O.

  • Author_Institution
    Opt. Electron. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    852
  • Lastpage
    854
  • Abstract
    A simple technique for the extraction of low field mobility mu 0 and linear and quadratic coefficients alpha and beta in Si-MOSFETs at 77 K is presented. From measurement of the drain currents and transconductances of the devices one can determine the parameters. The method is applied to long channel and short channel LDD MOSFETs.
  • Keywords
    carrier mobility; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 77 K; LDD; MOSFETs; Si; drain currents; linear coefficients; long channel devices; low field mobility; mobility parameters extraction; models; quadratic coefficients; semiconductors; short channel devices; transconductances;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900558
  • Filename
    82811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1312024