• DocumentCode
    1312255
  • Title

    Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs

  • Author

    Khayer, M. Abul ; Lake, Roger K.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA, USA
  • Volume
    30
  • Issue
    12
  • fYear
    2009
  • Firstpage
    1257
  • Lastpage
    1259
  • Abstract
    The prototypical device to exploit cold carrier injection is the nanowire (NW) or carbon nanotube (CNT) band-to-band tunneling field-effect transistor. Understanding the effect of material choice and NW or CNT diameter on the drive and leakage currents is critical. A zero-order analytical approach is described for assessing and comparing the effect of different materials and diameters on the drive current, the leakage current, and the required electric fields.
  • Keywords
    carbon nanotubes; field effect transistors; indium compounds; leakage currents; nanowires; InAs; InSb; band-to-band tunneling FET; band-to-band tunneling field-effect transistor; carbon nanotube; cold carrier injection; drive currents; leakage currents; nanowire; prototypical device; zero-order analytical approach; ${bf k} cdot {bf p}$ method; BTBT field-effect transistors (BTBTFETs); Band-to-band tunneling (BTBT); InAs nanowire (NW); InSb NW; carbon nanotube (CNT); complex bandstructure;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034277
  • Filename
    5325909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1312255