Title :
Two-dimensional electron gas base hot electron transistor
Author :
Matthews, Peter ; Kelly, Michael J. ; Law, Victor J. ; Hasko, D.G. ; Pepper, Matthew ; Ahmed, Hameeza ; Peacock, D.C. ; Ritchie, D.A. ; Jones, Geb A. C.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
fDate :
6/21/1990 12:00:00 AM
Abstract :
Presents data on a large area hot-electron transistor in the GaAs/AlGaAs materials system that uses a two-dimensional electron gas for its base. When the feature size is scaled from the present 100 mu m (approximately) to 1 mu m, the authors predict useful transistor action at 100 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hot electron transistors; 1 micron; GaAs-AlGaAs; base; feature size; large area hot-electron transistor; transistor action; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900565
