Title :
Impulse-doped GaAs power FETs for high efficiency operation
Author :
Smith, R.P. ; Seielstad, D.A. ; Ho, Paul ; Smith, P.M. ; Fabian, W. ; Ballingall, J.M.
Author_Institution :
General Electric Co., Syracuse, NY
fDate :
5/12/1988 12:00:00 AM
Abstract :
The authors have fabricated impulse-doped GaAs power FETs demonstrating 59% power-added efficiency with 10.4 dB associated gain and 0.33 W/mm at 10 GHz. To the best of their knowledge, this is the highest power-added efficiency ever reported at X-band for a GaAs FET
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; semiconductor doping; solid-state microwave devices; 10 GHz; 10.4 dB; 59 percent; GaAs; X-band; gain; high efficiency operation; impulse doping; microwave transistor; power FETs; power-added efficiency;
Journal_Title :
Electronics Letters
