Title :
Buried rectangular GaInAs/InP corrugations of 70 nm pitch fabricated by OMVPE
Author :
Yamamoto, Takayuki ; Miyamoto, Yutaka ; Ogawa, Michiko ; Inamura, E. ; Furuya, Keiichi
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fDate :
6/21/1990 12:00:00 AM
Abstract :
Rectangular InP corrugations of 70 nm pitch and 40 nm depth were buried with GaInAs by OMVPE so as to preserve the rectangular shape. A low regrowth temperature and short heating up time in an atmosphere of high PH3 partial pressure are effective in the suppression of thermal deformation during regrowth.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 70 nm; GaInAs-InP; OMVPE; heating up time; partial pressure; rectangular shape; regrowth temperature; thermal deformation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900572
