DocumentCode :
1312676
Title :
A Compact V-Band Bandpass Filter in IPD Technology
Author :
Hsiao, Chih-Yin ; Hsu, Shawn S H ; Chang, Da-Chiang
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
21
Issue :
10
fYear :
2011
Firstpage :
531
Lastpage :
533
Abstract :
This work presents a miniaturized bandpass filter in V-band using integrated passive device (IPD) technology with thick metal layers and Benzocyclobutene (BCB) dielectric on a glass substrate. The proposed filter, comprised of two stepped-impedance resonators with quarter-wave short-circuited stubs and floating pads, has low passband insertion loss and high stopband attenuation in a compact size. The fabricated filter has an insertion loss of 2.46 dB at the center frequency of 59 GHz, and a 3 dB bandwidth from 55.7 to 62.2 GHz. The core size of this filter is only 0.32×0.4 mm2(0.064 ×0.08 λ02).
Keywords :
band-pass filters; dielectric materials; millimetre wave filters; millimetre wave resonators; BCB dielectric; IPD technology; benzocyclobutene dielectric; compact V-band bandpass filter; floating pads; frequency 55.7 GHz to 62.2 GHz; glass substrate; high-stopband attenuation; integrated passive device; loss 2.46 dB; low-passband insertion loss; quarter-wave short-circuited stubs; stepped-impedance resonators; thick-metal layers; Attenuation; Couplings; Filtering theory; Insertion loss; Metals; Substrates; Wireless communication; Filter; V-band; integrated passive device (IPD); resonator;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2011.2165534
Filename :
6007150
Link To Document :
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