• DocumentCode
    1312956
  • Title

    n-AlInAs/(InAs)3(GaAs)1 superlattice modulation-doped field effect transistor grown by molecular beam epitaxy

  • Author

    Nishiyama, Naoto ; Yano, Hiroyuki ; Nakajima, Shigeru ; Hayashi, H.

  • Author_Institution
    Sumitomo Electr. Ind. Ltd., Yokohama, Japan
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    885
  • Lastpage
    886
  • Abstract
    A pseudomorphic modulation-doped field effect transistor (MODFET) using a (InAs)3(GaAs)1 superlattice as a channel layer has been successfully demonstrated. The device was grown by molecular beam epitaxy. The MODFET with 0.85 mu m gate length exhibits maximum external DC transconductance and current gain cut-off frequency of 475 mS/mm and 28.5 GHz, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor superlattices; 0.85 micron; 28.5 GHz; AlInAs-(InAs) 3(GaAs); MODFET; channel layer; current gain cut-off frequency; gate length; maximum external DC transconductance; modulation-doped field effect transistor; molecular beam epitaxy; superlattice;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900578
  • Filename
    82827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1312956