Title :
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz
Author :
Tessmann, A. ; Leuther, A. ; Hurm, V. ; Kallfass, I. ; Massler, Hermann ; Kuri, M. ; Riessle, M. ; Zink, M. ; Loesch, R. ; Seelmann-Eggebert, Matthias ; Schlechtweg, Michael ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
Abstract :
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC and a 440-GHz class-B frequency doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50-μm-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode amplifier circuit to realize a full H -band (220 to 325 GHz) S-MMIC amplifier module with monolithically integrated waveguide transitions.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; coplanar waveguides; frequency multipliers; gallium arsenide; indium compounds; submillimetre wave amplifiers; submillimetre wave integrated circuits; GCPW; GaAs; InAlAs-InGaAs; S-MMIC amplifier module; amplifier MMIC; cascode amplifier circuit; class-B frequency doubler circuit; frequency 220 GHz to 500 GHz; grounded coplanar circuit topology; grounded coplanar waveguide; high-data-rate wireless communication systems; metamorphic HEMT MMIC technology; metamorphic high-electron mobility transistor technology; monolithically integrated waveguide transitions; next-generation sensors; size 20 nm; size 35 nm; size 50 mum; submillimeter-wave monolithic integrated circuits; waveguide-to-microstrip transitions; Frequency measurement; Logic gates; MMICs; Optical waveguides; Substrates; Waveguide transitions; mHEMTs; $H$-band; Amplifier circuit; cascode transistor; frequency multiplier; grounded coplanar waveguide (GCPW); metamorphic high electron mobility transistor (mHEMT); submillimeter-wave monolithic integrated circuit (S-MMIC); waveguide packaging; waveguide-to-microstrip transition;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2011.2163212
