Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz

Author

Tessmann, A. ; Leuther, A. ; Hurm, V. ; Kallfass, I. ; Massler, Hermann ; Kuri, M. ; Riessle, M. ; Zink, M. ; Loesch, R. ; Seelmann-Eggebert, Matthias ; Schlechtweg, Michael ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

Volume

46

Issue

10

fYear

2011

Firstpage

2193

Lastpage

2202

Abstract

In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC and a 440-GHz class-B frequency doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50-μm-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode amplifier circuit to realize a full H -band (220 to 325 GHz) S-MMIC amplifier module with monolithically integrated waveguide transitions.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; coplanar waveguides; frequency multipliers; gallium arsenide; indium compounds; submillimetre wave amplifiers; submillimetre wave integrated circuits; GCPW; GaAs; InAlAs-InGaAs; S-MMIC amplifier module; amplifier MMIC; cascode amplifier circuit; class-B frequency doubler circuit; frequency 220 GHz to 500 GHz; grounded coplanar circuit topology; grounded coplanar waveguide; high-data-rate wireless communication systems; metamorphic HEMT MMIC technology; metamorphic high-electron mobility transistor technology; monolithically integrated waveguide transitions; next-generation sensors; size 20 nm; size 35 nm; size 50 mum; submillimeter-wave monolithic integrated circuits; waveguide-to-microstrip transitions; Frequency measurement; Logic gates; MMICs; Optical waveguides; Substrates; Waveguide transitions; mHEMTs; $H$-band; Amplifier circuit; cascode transistor; frequency multiplier; grounded coplanar waveguide (GCPW); metamorphic high electron mobility transistor (mHEMT); submillimeter-wave monolithic integrated circuit (S-MMIC); waveguide packaging; waveguide-to-microstrip transition;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2011.2163212

Filename

6008517