DocumentCode :
1313022
Title :
Co-doping effects in rare-earth-doped planar waveguides
Author :
Bonar, J.R. ; Aitchison, J.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
143
Issue :
5
fYear :
1996
fDate :
10/1/1996 12:00:00 AM
Firstpage :
293
Lastpage :
297
Abstract :
Results on rare-earth-doped lasers and amplifiers in planar silica waveguides fabricated by flame hydrolysis deposition (FHD) and reactive ion etching (RIE) are presented. The authors review their results on the optimisation of doping levels, co-dopant species, fusing temperature, fusing time and glass composition to reduce both scatter loss and ion-ion interactions. Two different doping techniques have been investigated and the planar films produced by each are compared. These glasses have been used to produce waveguide lasers in both Nd3+ and Er3+ doped silica
Keywords :
erbium; neodymium; optical fabrication; optical planar waveguides; solid lasers; sputter etching; waveguide lasers; Er3+ doped silica; Nd3+ doped silica; SiO2:Er; SiO2:Nd; co-dopant species; co-doping effects; doping level optimisation; doping techniques; flame hydrolysis deposition; fusing temperature; fusing time; glass composition; ion-ion interactions; planar films; planar silica waveguides; rare-earth-doped laser amplifiers; rare-earth-doped lasers; rare-earth-doped planar waveguides; reactive ion etching; review; scatter loss; waveguide lasers;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:19960732
Filename :
556351
Link To Document :
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