Low-threshold GRIN-SCH AlGaInAs 1.55 mu m quantum well buried ridge structure lasers grown by molecular beam epitaxy

Author

Kazmierski, C. ; Blez, M. ; Quillec, M. ; Allovon, M. ; Sermage, B.

Author_Institution

CNET, Bagneux, France

Volume

26

Issue

13

fYear

1990

fDate

6/21/1990 12:00:00 AM

Firstpage

889

Lastpage

891

Abstract

Two-step MBE/MOVPE epitaxy buried ridge stripe GRIN-SCH quantum well lasers having MBE active structure consisting of GaInAs quantum wells and an AlGaInAs continuously graded confinement region have been fabricated and characterised. Devices operating at 1.55 mu m wavelength with a low CW threshold current of 18.7 mA have been demonstrated. This figure is the best result obtained in the AlGaInAs system. A study of the intrinsic optical response of the active layer showed a very fast decay of the resonance oscillations. A good figure of the optical bandwidth move-out rate 3.9 GHz mW^-12/ has been observed.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; 18.7 mA; GaInAs-AlGaInAs; buried ridge stripe GRIN-SCH quantum well lasers; continuously graded confinement region; fast decay; intrinsic optical response; low CW threshold current; optical bandwidth move-out rate; quantum wells; resonance oscillations; two-step MBE/MOVPE epitaxy;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900581

Filename

82830