Acoustically coupled thickness-mode AIN-on-Si band-pass filters-Part II: simulation and analysis

Author

Thakar, Vikram A. ; Pan, Wanling ; Ayazi, Farrokh ; Rais-Zadeh, Mina

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

59

Issue

10

fYear

2012

fDate

10/1/2012 12:00:00 AM

Firstpage

2270

Lastpage

2277

Abstract

In this, the second of two papers, we present numerical simulations and comprehensive analysis of acoustically coupled thickness-mode AlN-on-Si filters. We simulate the scattering parameters of such acoustically coupled filters using commercially available finite element analysis software and compare the simulation results with a set of measurements. The simulations are in good agreement with the measurements, allowing the optimization of filter characteristics. We analyze the filter response under varying geometric parameters and demonstrate that variations in the top electrode geometry allow the design of low-loss filters (insertion loss <;5 dB) with percentage bandwidth up to about 1% and ripple less than 1 dB.

Keywords

III-V semiconductors; S-parameters; acoustic resonator filters; aluminium compounds; band-pass filters; electrodes; finite element analysis; wide band gap semiconductors; AlN; Si; acoustically coupled thickness-mode band-pass filters; electrically coupled resonator acoustic filters; filter characteristic optimization; filter response analysis; finite element analysis software; low-loss filters; numerical simulations; scattering parameters; top electrode geometry; Band pass filters; Bandwidth; Electrodes; Finite element methods; Insertion loss; Piezoelectric transducers; Resonator filters;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2012.2452

Filename

6327498