• DocumentCode
    1313559
  • Title

    Infrared (IR) Absorber Based on Multiresonant Structure

  • Author

    Jaradat, Hamzeh ; Akyurtlu, Alkim

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Massachusetts, Lowell, MA, USA
  • Volume
    11
  • fYear
    2012
  • fDate
    7/4/1905 12:00:00 AM
  • Firstpage
    1222
  • Lastpage
    1225
  • Abstract
    In this letter, an absorber design is introduced that has a very wide absorption band at normal incidence over the midrange infrared (IR) wavelength regime. The proposed structure is comprises four layers, where the extra layer adds a degree of freedom in optimizing the response compared the conventional three-layered absorbers (dielectric spacer sandwiched between a ground thin film and a resonant conducting pattern). The simulations revealed a broadband absorption region that extends from 3 up to 12 μm of light wavelength achieving more than 120% of full bandwidth at half-maximum (FWHM).
  • Keywords
    dielectric materials; light absorption; optical multilayers; dielectric spacer; four layered absorbers; full bandwidth at half-maximum; ground thin film; infrared absorber; midrange infrared wavelength regime; multiresonant structure; optical layer; resonant conducting pattern; very wide absorption band; Absorption; Broadband communication; Dielectrics; Electric fields; Magnetic fields; Magnetic resonance; Metamaterials; Broadband absorbers; infrared (IR) absorbers; metamaterials; multiresonant structure;
  • fLanguage
    English
  • Journal_Title
    Antennas and Wireless Propagation Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1536-1225
  • Type

    jour

  • DOI
    10.1109/LAWP.2012.2223652
  • Filename
    6327589