An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design

Author

Ghosh, Pujarini ; Haldar, Subhasis ; Gupta, R.S. ; Gupta, Mridula

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

Volume

59

Issue

12

fYear

2012

Firstpage

3263

Lastpage

3268

Abstract

In this paper, an extensive study on the intermodulation distortion and the linearity of gate-material-engineered cylindrical-gate MOSFET (GME CGT MOSFET) has been done, and the influence of technology variations such as channel length and gate material workfunction variations is explored using an ATLAS 3-D device simulator. The simulation results reveal that the GME CGT MOSFET design displays a significant enhancement in the device´s linearity and intermodulation distortion performance in terms of the figure-of-merit metrics VIP2, VIP3, IIP3, and IMD3 and the higher order transconductance coefficients gm1, gm2, and gm3. The results are, thus, useful for optimizing the device bias point for RFIC design with higher efficiency and better linearity performance.

Keywords

MOSFET; integrated circuit design; intermodulation distortion; radiofrequency integrated circuits; ATLAS 3D device simulator; GME CGT MOSFET design; IIP3; IMD3; RFIC design; VIP2; VIP3; channel length; device bias point; device linearity; figure-of-merit metrics; gate material workfunction variations; gate-material-engineered cylindrical-gate MOSFET; higher order transconductance coefficients; intermodulation distortion performance; linearity performance; technology variations; Intermodulation distortion; Linearity; Logic gates; MOSFET circuits; Metals; Performance evaluation; Radio frequency; ATLAS; cylindrical-gate (CGT) MOSFET; gate material engineering (GME); single metal gate (SMG);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2219537

Filename

6327646