DocumentCode :
1313733
Title :
Electro-Optical Performances of p-on-n and n-on-p Silicon Photomultipliers
Author :
Mazzillo, Massimo ; Ronzhin, Anatoly ; Los, Sergey ; Abbisso, Salvatore ; Sanfilippo, Delfo ; Valvo, Giusy ; Carbone, Beatrice ; Piana, Angelo ; Fallica, Giorgio ; Albrow, Michael ; Ramberg, Erik
Author_Institution :
R&D, IMS, Catania, Italy
Volume :
59
Issue :
12
fYear :
2012
Firstpage :
3419
Lastpage :
3425
Abstract :
Silicon photomultipliers (SiPMs) are fabricated in two different configurations: p-on-n and n-on-p junctions. p-on-n SiPMs turn out to be more suitable for application in positron emission tomography (PET), due to their higher sensitivity in blue wavelength range where common PET scintillators have their emission spectrum. In this paper, we report on the electro-optical performances of the first p-on-n SiPMs manufactured at STMicroelectronics, Catania. The results obtained on these devices are compared with those measured on the standard n-on-p technology.
Keywords :
elemental semiconductors; p-n junctions; photomultipliers; silicon; Catania; STMicroelectronics; Si; common PET scintillators; electrooptical performances; emission spectrum; n-on-p silicon photomultipliers; p-on-n silicon photomultipliers; positron emission tomography; standard n-on-p technology; Microcell networks; Performance evaluation; Photonics; Positron emission tomography; Silicon; Wavelength measurement; Cross talk; p-on-n and n-on-p junctions; photon detection efficiency (PDE); silicon photomultipliers (SiPMs); timing jitter;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2218250
Filename :
6327649
Link To Document :
بازگشت