Title :
Theoretical and Numerical Investigations of Wavelength Bi/Multistability in Semiconductor Ring Lasers
Author :
Guohui Yuan ; Zhuoran Wang
Author_Institution :
Sch. of Optoelectron. Inf., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Wavelength bi/multistability in semiconductor ring lasers is studied both theoretically and numerically based on a multimode model with nonlinear effects arising from carrier density pulsation, carrier heating, spectral hole-burning, and four-wave mixing included. Wavelength bi/multistability is explained theoretically, and conditions required for wavelength bi/multi-stable operation are derived analytically. It shows the dependence of wavelength bi/multistability on device size and other device and material properties. Radius range within which the device is wavelength bi/multistable is calculated based on the derived expressions. Both the theory and calculations are verified by numerical simulations and supported by previously reported experimental observations on wavelength bi/multistable semiconductor ring lasers. The results indicate that semiconductor microring/microdisk lasers with radius down to 10 μm could still support wavelength bi/multistable operation.
Keywords :
laser stability; multiwave mixing; optical bistability; optical hole burning; ring lasers; semiconductor lasers; carrier density pulsation; carrier heating; device properties; device size; four-wave mixing; material properties; multimode model; nonlinear effects; semiconductor microdisk lasers; semiconductor microring lasers; semiconductor ring lasers; spectral hole-burning; wavelength bistability; wavelength multistability; Charge carrier density; Couplings; High speed optical techniques; Materials; Nonlinear optics; Optical bistability; Semiconductor lasers; All optical memory; bistability; four-wave mixing; microcavity laser; multistability; photonic integrated circuit; semiconductor ring laser;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2011.2167130