Title :
Determination of Junction Temperature in InGaN and AlGaInP Light-Emitting Diodes
Author :
Lee, Ya-Ju ; Lee, Chia-Jung ; Chen, Chih-Hao
Author_Institution :
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; InGaN-AlGaInP; injected currents; junction temperature; light-emitting diodes; physical parameters; Current measurement; Heating; Junctions; Light emitting diodes; Temperature; Temperature dependence; Temperature measurement; Junction temperature; light-emitting diode (LED); thermal resistance;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2050866
