• DocumentCode
    1314260
  • Title

    Determination of Junction Temperature in InGaN and AlGaInP Light-Emitting Diodes

  • Author

    Lee, Ya-Ju ; Lee, Chia-Jung ; Chen, Chih-Hao

  • Author_Institution
    Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
  • Volume
    46
  • Issue
    10
  • fYear
    2010
  • Firstpage
    1450
  • Lastpage
    1455
  • Abstract
    The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; InGaN-AlGaInP; injected currents; junction temperature; light-emitting diodes; physical parameters; Current measurement; Heating; Junctions; Light emitting diodes; Temperature; Temperature dependence; Temperature measurement; Junction temperature; light-emitting diode (LED); thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2010.2050866
  • Filename
    5565341
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1314260