A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 $\\mu{\\rm m}$ CMOS Technology

Author

Lin, Shih-Kai ; Kuo, Jing-Lin ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

21

Issue

10

fYear

2011

Firstpage

562

Lastpage

564

Abstract

A 56 to 66 GHz sub-harmonic resistive mixer using 0.13 μm CMOS technology is presented in this letter. This mixer exhibits a flat conversion loss of about -12 and -13 dB and good isolations between ports from 56 to 66 GHz for both down and up-conversion with a lowest LO power of 0 and -1 dBm. The 2LO-RF isolation is more than 27 dB even if IF input power exceeds 4 dBm, which results from the mechanism of connecting drain and body of the device. Besides, this mixer has a relatively high input P_1dB and a 3 GHz IF bandwidth in each band defined in IEEE 802.15.3c standard.

Keywords

CMOS integrated circuits; Zigbee; field effect MIMIC; field effect transistors; millimetre wave mixers; 2LO-RF isolation; CMOS technology; IEEE 802.15.3c standard; IF input power; frequency 66 GHz to 56 GHz; size 0.13 mum; subharmonic resistive FET mixer; CMOS integrated circuits; FETs; Frequency measurement; Gain; Mixers; Radio frequency; Transmission line measurements; CMOS mixers; resistive FET mixers; resonator; sub-harmonic mixers;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2165701

Filename

6009209

A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 CMOS Technology

Lin, Shih-Kai ; Kuo, Jing-Lin ; Wang, Huei

jour

A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 $\\mu{\\rm m}$ CMOS Technology