DocumentCode
1314519
Title
High Efficiency WCDMA Power Amplifier With Pulsed Load Modulation (PLM)
Author
Liao, Shu-Hsien ; Wang, Yuanxun Ethan
Author_Institution
Electr. Eng. Dept., Univ. of California at Los Angeles, Los Angeles, CA, USA
Volume
45
Issue
10
fYear
2010
Firstpage
2030
Lastpage
2037
Abstract
Complex non-constant-envelope modulations are often used in wireless communications. A power amplifier (PA) is developed based on the concept of pulsed load modulation (PLM) that can enhance the power efficiency of the PA when the output power is back off from the peak due to modulations. The PLM technique utilizes the time-varying behavior of switched resonators to form an optimal, power dependent load impedance. The switched resonator consists of a balanced pair of switching mode PAs that drive a high-Q bandpass filter. In addition to its efficiency enhancement through PLM, the PA is able to preserve the linearity of complex modulations through the architecture of envelope delta-sigma modulation (EDSM). In this paper, a 1.87 GHz PLM power amplifier is fabricated with a pair of 0.35 μm GaAs pHEMT devices. The duty cycle tests show its significant improvement on power efficiency at different back-off levels over traditional Class-B amplifiers. The PA module is also tested with a single-channel WCDMA signal with peak to average ratio (PAR) of 10.8 dB. It has achieved 39 dBc adjacent channel leakage ratio (ACLR) at 5 MHz offsets without needing additional linearization techniques. The power added efficiency in this case is 43% including the loss of the output filter and 52.6% if the loss of the filter is de-embedded.
Keywords
band-pass filters; code division multiple access; delta-sigma modulation; gallium arsenide; power HEMT; power amplifiers; pulse modulation; resonators; wavelength division multiplexing; GaAs; adjacent channel leakage ratio; back-off level; class-B amplifier; complex nonconstant-envelope modulation; envelope delta-sigma modulation; frequency 1.87 GHz; high efficiency WCDMA power amplifier; high-Q bandpass filter; load impedance; output filter; output power; pHEMT device; peak to average ratio; power efficiency; pulsed load modulation; single-channel WCDMA signal; size 0.35 mum; switched resonator; time-varying behavior; wireless communication; Impedance; Multiaccess communication; Phase modulation; Power amplifiers; Power generation; Switches; Switched resonator; WCDMA; envelope delta-sigma modulation; non-constant envelope modulation; pulsed load modulation;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2010.2057931
Filename
5565376
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