Dual-Mode High-Dynamic Range Class E HBT Power Amplifier for WCDMA EER Transmitter

Author

Kim, Ki Young ; Kim, Woo Young ; Park, Chul Soon

Author_Institution

Sch. of Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

20

Issue

10

fYear

2010

Firstpage

572

Lastpage

574

Abstract

This letter demonstrates a high-dynamic range GaAs heterojunction bipolar transistor Class E power amplifier (PA) for a WCDMA envelope elimination and restoration transmitter using a dual-mode amplification. An impedance optimization can operate the lossless high-power Class E mode and lossless low-power Class AB mode. This PA has a high dynamic range of -50 dBm to 27 dBm and obtains a remarkably improved efficiency of 9% and 27% power-added efficiency (PAE) at output powers of 0 dBm and 10 dBm, respectively, for low-power mode, and 40% and 48% PAE at 20 and 27 dBm, respectively, for high-power mode.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar transistor circuits; code division multiple access; gallium arsenide; heterojunction bipolar transistors; transmitters; GaAs; MMIC power amplifiers; WCDMA EER transmitter; class AB mode; class E heterojunction bipolar transistors; envelope elimination and restoration; Dynamic range; Heterojunction bipolar transistors; MMICs; Multiaccess communication; Power generation; Spread spectrum communication; Transmitters; Class E; hetero-junction bipolar transistor (HJBT); monolithic microwave integrated circuit (MMIC); power amplifier (PA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2066263

Filename

5565380