• DocumentCode
    1314739
  • Title

    Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

  • Author

    Polentier, I. ; Buydens, L. ; Ackaert, A. ; Demeester, Piet ; Van Daele, Peter ; Depestel, F. ; Lootens, Didier ; Baets, Roel

  • Author_Institution
    Lab. of Electromagn. & Acoust., Gent Univ., Belgium
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    925
  • Lastpage
    927
  • Abstract
    The successful realisation of a fully electrically interconnected optical and electronic device using the epitaxial lift-off technique is reported. The OEIC consists of a high output power InGaAs/GaAs/AlGaAs strained QW LED and a GaAs MESFET driver. The surface emitting LED shows an external quantum efficiency of 1.7%. The output/input ratio of the LED-FET combination was 54 mu W V-1 sr-1.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; light emitting diodes; semiconductor technology; 1.7 percent; GaAs MESFET driver; InGaAs-GaAs-AlGaAs; OEIC; epitaxial lift-off technique; external quantum efficiency; monolithic integration; strained layer SQW LED; surface emitting LED;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900604
  • Filename
    82852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1314739