DocumentCode :
1314823
Title :
Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In 0.53Ga0.47As cap layer and SiO2 dielectric capping
Author :
Lee, J.H. ; Si, S.K. ; Moon, Y.B. ; Yoon, E.J. ; Kim, S.J.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume :
33
Issue :
13
fYear :
1997
fDate :
6/19/1997 12:00:00 AM
Firstpage :
1179
Lastpage :
1181
Abstract :
SiO2 has been successfully used as the dielectric capping material for bandgap tuning in InGaAs/InP MQW for the first time where the InGaAs cap layer is used simultaneously. The samples showed large blue shifts of bandgap energy after RTA treatment (185 and 230 meV at 750 and 850°C, respectively). Samples with SiO2-InP or SiNx-InGaAs cap layer combinations did not show significant energy shifts
Keywords :
III-V semiconductors; diffusion; energy gap; gallium arsenide; indium compounds; rapid thermal annealing; semiconductor doping; semiconductor quantum wells; 185 meV; 230 meV; 750 degC; 850 degC; In0.53Ga0.47As-InP; RTA treatment; SiN-InGaAs; SiO2; SiO2-InP; bandgap energy; bandgap tuning; cap layer; dielectric capping; energy shifts; impurity free vacancy diffusion; multiquantum well structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970761
Filename :
601017
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1314823
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