• DocumentCode
    1314846
  • Title

    Strong luminescence from erbium in Si/Si1-xGex/Si quantum well structures

  • Author

    Huda, M.Q. ; Peaker, A.R. ; Evans-Freeman, J.H. ; Houghton, D.C. ; Gillin, W.P.

  • Author_Institution
    Centre for Electron. Mater., Manchester Univ., UK
  • Volume
    33
  • Issue
    13
  • fYear
    1997
  • fDate
    6/19/1997 12:00:00 AM
  • Firstpage
    1182
  • Lastpage
    1183
  • Abstract
    Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host
  • Keywords
    Ge-Si alloys; amorphisation; elemental semiconductors; erbium; ion implantation; photoluminescence; recrystallisation; semiconductor growth; semiconductor materials; semiconductor quantum wells; silicon; solid phase epitaxial growth; 550 C; 77 K; Si-SiGe-Si:Er; Si/Si1-xGex/Si:Er; amorphisation; ion implantation; luminescence; quantum well structures; recrystallisation; solid phase epitaxial regrowth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970750
  • Filename
    601021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1314846