Title :
Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon
Author :
Mirabedini, M.R. ; Goodwin-Johansson, S.H. ; Massoud, H.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
fDate :
6/19/1997 12:00:00 AM
Abstract :
A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200 Å without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances
Keywords :
MOS integrated circuits; MOSFET; ULSI; capacitance; electron beam deposition; elemental semiconductors; integrated circuit technology; silicon; 200 angstrom; Si; defect-free junctions; electron beam evaporation; gate regions; junction capacitances; selective growth process; self-aligned MOSFET structure; source/drain regions; submicrometre elevated MOSFET technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970776
