Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges

Author

Yu, Yun Seop ; Cho, NamKi ; Hwang, Sung Woo ; Ahn, Doyeol

Author_Institution

Dept. of Inf. & Control Eng., Hankyong Nat. Univ., Anseong, South Korea

Volume

57

Issue

11

fYear

2010

Firstpage

3176

Lastpage

3180

Abstract

On the basis of 2-D potential analysis performed while taking into account the effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From the 2-D Poisson´s equation based on a parabolic potential approximation, a simple and accurate analytical expression for the threshold voltage is derived. The proposed model is validated using a 3-D device simulator, and good agreement is obtained for various device dimensions and charge distributions. This model can be used to investigate hot-carrier-induced degradation of SGMOSFETs.

Keywords

MOSFET; Poisson equation; semiconductor device models; 2D Poisson´s equation; 2D potential analysis; 3D device simulator; SGMOSFET; analytical threshold voltage model; cylindrical surrounding-gate MOSFET; effective conducting path effect; parabolic potential approximation; surrounding-gate MOSFETs; Analytical models; Hot carrier effects; MOSFETs; Silicon; Threshold voltage; Effective conducting path effect (ECPE); hot-carrier effects (HCEs); localized charge; surface potential; surrounding-gate MOSFET (SGMOSFET); threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2066278

Filename

5565457