Title :
1.53 mu m DFB laser on semi-insulating InP substrate with very low threshold current
Author :
Thulke, W. ; Illek, S.
Author_Institution :
Res. Labs., Siemens AG, Munich, West Germany
fDate :
6/21/1990 12:00:00 AM
Abstract :
A novel GaInAsP DFB laser structure on a semi-insulating InP substrate is reported. A new contacting scheme is applied which allows both contacts to be placed on the wafer top while preserving the planar surface of the buried-heterostructure laser diode. CW threshold currents as low as 7 mA have been measured at 25 degrees C on 220 mu m long devices. These are the lowest values reported for 1.5 mu m DFB lasers on semi-insulating substrate.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.53 micron; 200 micron; 25 C; 7 mA; CW threshold currents; DFB laser structure; GaInAsP; GaInAsP-InP; InP substrate; buried-heterostructure laser diode; contacting scheme; low threshold current; planar surface; semi-insulating substrate; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900609
