DocumentCode
1315135
Title
U. S. Army Advancement in Transistor Reliability Through Manufacturing Process Improvements
Author
Hakim, E.B. ; Reich, B.
Author_Institution
Solid State and Frequency Control Division, U. S. Army Electronics Labs., Fort Monmouth, N. J.
Issue
2
fYear
1965
Firstpage
94
Lastpage
99
Abstract
This report outlines transistor reliability improvements achieved by semiconductor manufacturers who incorporated improved processing techniques into their lines. These advancements were achieved under the project known as the Production Engineering Measures program for transistor reliability improvement. The procedures reported upon include the status of reliability of the particular devices used in the program (in most cases the entire family of devices); the methods of monitoring relative reliability improvements; and advanced techniques of specific processes such as diffusion, metalization, lead bonding, packaging, and photolithography.
Keywords
Aluminum; Contracts; Diffusion bonding; Germanium alloys; Manufacturing processes; Production; Semiconductor device reliability; Silicon; Surface treatment; Transistors;
fLanguage
English
Journal_Title
Reliability, IEEE Transactions on
Publisher
ieee
ISSN
0018-9529
Type
jour
DOI
10.1109/TR.1965.5214883
Filename
5214883
Link To Document