• DocumentCode
    1315135
  • Title

    U. S. Army Advancement in Transistor Reliability Through Manufacturing Process Improvements

  • Author

    Hakim, E.B. ; Reich, B.

  • Author_Institution
    Solid State and Frequency Control Division, U. S. Army Electronics Labs., Fort Monmouth, N. J.
  • Issue
    2
  • fYear
    1965
  • Firstpage
    94
  • Lastpage
    99
  • Abstract
    This report outlines transistor reliability improvements achieved by semiconductor manufacturers who incorporated improved processing techniques into their lines. These advancements were achieved under the project known as the Production Engineering Measures program for transistor reliability improvement. The procedures reported upon include the status of reliability of the particular devices used in the program (in most cases the entire family of devices); the methods of monitoring relative reliability improvements; and advanced techniques of specific processes such as diffusion, metalization, lead bonding, packaging, and photolithography.
  • Keywords
    Aluminum; Contracts; Diffusion bonding; Germanium alloys; Manufacturing processes; Production; Semiconductor device reliability; Silicon; Surface treatment; Transistors;
  • fLanguage
    English
  • Journal_Title
    Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9529
  • Type

    jour

  • DOI
    10.1109/TR.1965.5214883
  • Filename
    5214883