• DocumentCode
    1315210
  • Title

    Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes

  • Author

    Baile Chen ; Qiugui Zhou ; McIntosh, D.C. ; Jinrong Yuan ; Yaojia Chen ; Wenlu Sun ; Campbell, Joe C. ; Holmes, Archie L.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    48
  • Issue
    21
  • fYear
    2012
  • Firstpage
    1340
  • Lastpage
    1341
  • Abstract
    An antireflection coating was created for InP-based pin photodiodes using natural lithography with 100 nm-diameter SiO2 spheres. The surface showed a normal-incidence reflection of <;5% for wavelengths from 900 to 2500<;nm. Photodiodes with surface texturing showed an enhancement in quantum efficiency with no dark current degradation.
  • Keywords
    III-V semiconductors; antireflection coatings; indium compounds; nanolithography; p-i-n photodiodes; semiconductor diodes; silicon compounds; surface texture; InP; InP-based pin photodiodes; SiO2; antireflection coating; antireflective layer; natural lithography nanosphere texturing; normal-incidence reflection; quantum efficiency; size 100 nm; surface texturing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.2849
  • Filename
    6329294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315210