Title :
Amplitude and phase modulation in a 4 μm-thick GaAs/AlGaAs multiple quantum well modulator
Author :
Hsu, Ta Yuan ; Efron, U.
Author_Institution :
Hughes Res. Labs., Malibu, CA
fDate :
5/12/1988 12:00:00 AM
Abstract :
The experimental results of a 4 μm-thick GaAs/AlGaAs MQW modulator show an ~10:1 on/off ratio with an applied voltage of 20 V (Δα~6×103/cm at E~50 kV/cm) and ~0.4 πrad of phase shift with an applied voltage of 10 V (Δn~0.04 at E~25 kV/cm). Such high electro-optical modulations have previously been reported only in MQW optical waveguide modulators
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical modulation; semiconductor superlattices; 10 V; 20 V; 4 micron; GaAs-AlGaAs multiple quantum well modulator; amplitude modulation; applied voltage; electro-optical modulations; on/off ratio; phase modulation; phase shift; thickness;
Journal_Title :
Electronics Letters
