• DocumentCode
    1315280
  • Title

    Amplitude and phase modulation in a 4 μm-thick GaAs/AlGaAs multiple quantum well modulator

  • Author

    Hsu, Ta Yuan ; Efron, U.

  • Author_Institution
    Hughes Res. Labs., Malibu, CA
  • Volume
    24
  • Issue
    10
  • fYear
    1988
  • fDate
    5/12/1988 12:00:00 AM
  • Firstpage
    603
  • Lastpage
    605
  • Abstract
    The experimental results of a 4 μm-thick GaAs/AlGaAs MQW modulator show an ~10:1 on/off ratio with an applied voltage of 20 V (Δα~6×103/cm at E~50 kV/cm) and ~0.4 πrad of phase shift with an applied voltage of 10 V (Δn~0.04 at E~25 kV/cm). Such high electro-optical modulations have previously been reported only in MQW optical waveguide modulators
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical modulation; semiconductor superlattices; 10 V; 20 V; 4 micron; GaAs-AlGaAs multiple quantum well modulator; amplitude modulation; applied voltage; electro-optical modulations; on/off ratio; phase modulation; phase shift; thickness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315280