DocumentCode :
1315361
Title :
Substitutional-Gate MOSFETs With Composite ( \\hbox {In}_{0.53}\\hbox {Ga}_{0.47}\\hbox {As}/\\hbox {InAs}/\\hbox {In}_{0.53}\\hbox {Ga}_{0.47}\\hbox {As}) Channels and Self
Author :
Lee, Sanghoon ; Law, Jeremy J M ; Carter, Andrew D. ; Thibeault, Brian J. ; Mitchell, William ; Chobpattana, Varistha ; Krämer, Stephan ; Stemmer, Susanne ; Gossard, Arthur C. ; Rodwell, Mark J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California-Santa Barbara, Santa Barbara, CA, USA
Volume :
33
Issue :
11
fYear :
2012
Firstpage :
1553
Lastpage :
1555
Abstract :
We report enhancement-mode composite-channel (In0.53Ga0.47As/InAs/In0.53Ga0.47As) MOSFETs fabricated using a substitutional-gate process, with n+ relaxed InAs source-drain regions formed by regrowth by molecular beam epitaxy. A device with 70-nm gate length and 2-nm In0.53Ga0.47As/3.5-nm InAs/3-nm In0.53Ga0.47As channel showed a peak transconductance of greater than 0.76 mS/μm at Vds = 0.4 V and showed Id = 0.5 mA/μm at Vds = 0.4 V and Vgs - Vth = 0.7 V. The subthreshold swing at Vds = 0.1 V was 130 mV/dec.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; In0.53Ga0.47As-InAs-In0.53Ga0.47As; composite channels; enhancement-mode composite-channel MOSFET; molecular beam epitaxy; self-aligned MBE source-drain regrowth; size 70 nm; source-drain regions; substitutional-gate MOSFET; substitutional-gate process; voltage 0.4 V; Electrodes; Etching; MOSFETs; Molecular beam epitaxial growth; Composite channel; III–V MOSFETs; molecular beam epitaxy (MBE) regrowth; source–drain regrowth; substitutional gate;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2215572
Filename :
6329394
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1315361
بازگشت