DocumentCode
1315379
Title
275 GHz 3-mask integrated GaAs sampling circuit
Author
Yu, R.Y. ; Case, Michael ; Kamegawa, M. ; Sundaram, Murali ; Rodwell, Mark J. W. ; Gossard, A.W.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
26
Issue
13
fYear
1990
fDate
6/21/1990 12:00:00 AM
Firstpage
949
Lastpage
951
Abstract
A monolithic GaAs diode sampling head with 275 GHz (-3 dB) bandwidth gated by a nonlinear-transmission-line (NLTL) strobe pulse generator and fabricated using three masks at 3 mu m resolution is reported. The sampling circuit step response, measured using a second NLTL as a test signal, showed a 10.9 ps (10-90%) convolved falltime and 24% peak to peak ringing.
Keywords
III-V semiconductors; MMIC; gallium arsenide; microwave measurement; semiconductor device testing; semiconductor diodes; solid-state microwave devices; test equipment; 275 GHz; EHF; GaAs diode; MM-wave devices; broadband operation; integrated sampling circuit; microwave device characterisation; millimetre wave measurement; monolithic sampling head; nonlinear-transmission-line; step response; strobe pulse generator; three mask fabrication process; two-diode bridge configuration; wideband instrumentation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900619
Filename
82867
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