Title :
275 GHz 3-mask integrated GaAs sampling circuit
Author :
Yu, R.Y. ; Case, Michael ; Kamegawa, M. ; Sundaram, Murali ; Rodwell, Mark J. W. ; Gossard, A.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/21/1990 12:00:00 AM
Abstract :
A monolithic GaAs diode sampling head with 275 GHz (-3 dB) bandwidth gated by a nonlinear-transmission-line (NLTL) strobe pulse generator and fabricated using three masks at 3 mu m resolution is reported. The sampling circuit step response, measured using a second NLTL as a test signal, showed a 10.9 ps (10-90%) convolved falltime and 24% peak to peak ringing.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave measurement; semiconductor device testing; semiconductor diodes; solid-state microwave devices; test equipment; 275 GHz; EHF; GaAs diode; MM-wave devices; broadband operation; integrated sampling circuit; microwave device characterisation; millimetre wave measurement; monolithic sampling head; nonlinear-transmission-line; step response; strobe pulse generator; three mask fabrication process; two-diode bridge configuration; wideband instrumentation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900619
