Title :
Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET
Author :
Park, Chan-Hoon ; Ko, Myung-Dong ; Kim, Ki-Hyun ; Lee, Sang-Hyun ; Yoon, Jun-Sik ; Jeong-Soo Lee ; Yoon-Ha Jeong
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The dc performance and low-frequency (LF) noise behaviors after hot-carrier (HC)-induced stress were compared for a junctionless nanowire transistor (JNT) and an inversion-mode nanowire transistor (INT). Less dc degradation was found in the JNT than in the INT. Due to the low lateral peak electric field (E-field) and electrons traveling through the center of the nanowire, the LF noise increment after HC-induced stress in the JNT is much lower than that in the INT. Furthermore, due to the higher lateral peak E-field located under the gate and the conduction path that occurs near the surface, the LF noise of the INT is very sensitive to HC stress.
Keywords :
MOSFET; hot carriers; nanowires; semiconductor device noise; stress analysis; HC-induced stress; INT; LF noise behaviors; conduction path; hot-carrier stress; hot-carrier-induced stress; inversion-mode nanowire transistor; junctionless nanowire transistor; lateral peak E-field; low lateral peak electric field; low-frequency noise behavior; n-channel junctionless nanowire MOSFET; Degradation; Hot carrier effects; Low-frequency noise; Nanowires; Semiconductor device measurement; Stress; Transistors; Hot-carrier (HC)-induced degradation; junctionless nanowire transistor (JNT); low-frequency (LF) noise; multigate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2213575
