Title :
Solution of Poisson equation in p-AlyGa1-xAs/p-Al0.45Ga0.55As/n-GaAs structures
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
fDate :
6/21/1990 12:00:00 AM
Abstract :
The Poisson equation in a p-AlyGa1-yAs/p-Al0.45Ga0.55As/n-GaAs structure under reverse bias is solved analytically subject to ohmic contact boundary conditions. The solution takes into account the linear variation of the dielectric constant in the compositionally graded region. It is shown that the dielectric constant in the graded region can be approximated by an average dielectric constant with good accuracy in solving for the electrostatic field distribution and potential.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; gallium arsenide; p-n heterojunctions; semiconductor device models; Al yGa 1-yAs-Al 0.45Ga 0.55As-GaAs; Poisson equation; compositionally graded region; dielectric constant; electrostatic field distribution; electrostatic potential; linear variation; n-type semiconductor; ohmic contact boundary conditions; p-Al yGa 1-xAs/p-Al 0.45Ga 0.55As/n-GaAs structures; p-type semiconductor; reverse bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900584
