• DocumentCode
    1315421
  • Title

    Solution of Poisson equation in p-AlyGa1-xAs/p-Al0.45Ga0.55As/n-GaAs structures

  • Author

    Kwok, S.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    894
  • Lastpage
    896
  • Abstract
    The Poisson equation in a p-AlyGa1-yAs/p-Al0.45Ga0.55As/n-GaAs structure under reverse bias is solved analytically subject to ohmic contact boundary conditions. The solution takes into account the linear variation of the dielectric constant in the compositionally graded region. It is shown that the dielectric constant in the graded region can be approximated by an average dielectric constant with good accuracy in solving for the electrostatic field distribution and potential.
  • Keywords
    III-V semiconductors; aluminium compounds; electric fields; gallium arsenide; p-n heterojunctions; semiconductor device models; Al yGa 1-yAs-Al 0.45Ga 0.55As-GaAs; Poisson equation; compositionally graded region; dielectric constant; electrostatic field distribution; electrostatic potential; linear variation; n-type semiconductor; ohmic contact boundary conditions; p-Al yGa 1-xAs/p-Al 0.45Ga 0.55As/n-GaAs structures; p-type semiconductor; reverse bias;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900584
  • Filename
    82873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315421